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| DISCRETE SEMICONDUCTORS DATA SHEET BF547 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor FEATURES * Feedback capacitance typ. 1 pF * Stable oscillator operation * High current gain * Good thermal stability. handbook, halfpage BF547 DESCRIPTION Low cost NPN transistor in a plastic SOT23 package. 3 APPLICATIONS * It is intended for VHF and UHF TV-tuner applications and can be used as a mixer and/or oscillator. PINNING PIN 1 2 3 base emitter collector DESCRIPTION Marking code: E16. 1 Top view 2 MSB003 Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL VCEO VCBO VEBO ICM Ptot fT Cre Note 1. Ts is the temperature at the soldering point of the collector pin. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCEO VCBO VEBO ICM Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. September 1995 2 PARAMETER collector-emitter voltage collector-base voltage emitter-base voltage peak collector current total power dissipation storage temperature range junction temperature up to Ts = 70 C; note 1 open base open emitter open collector CONDITIONS - - - - - -65 - MIN. MAX. 20 30 3 50 300 +150 150 UNIT V V V mA mW C C PARAMETER collector-emitter voltage collector-base voltage emitter-base voltage peak collector current total power dissipation transition frequency feedback capacitance up to Ts = 70 C; note 1 IC = 15 mA; VCE 10 V; f = 500 MHz IE = ie = 0; VCB = 10 V; f = 1 MHz open base open emitter open collector CONDITIONS - - - - - 1.2 1 MIN. MAX. 20 30 3 50 300 1.6 - UNIT V V V mA mW GHz pF Philips Semiconductors Product specification NPN 1 GHz wideband transistor THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO hFE fT Cre GUM Note 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM PARAMETER collector cut-off current DC current gain transition frequency feedback capacitance maximum unilateral power gain; note 1 CONDITIONS IE = 0; VCB = 10 V IC = 2 mA; VCE = 10 V IC = 15 mA; VCE = 10 V; f = 500 MHz IE = ie = 0; VCB = 10 V; f = 1 MHz IC = 1 mA; VCE = 10 V; f = 100 MHz MIN. - 40 0.8 - - TYP. - 95 1.2 1 20 PARAMETER from junction to soldering point note 1 CONDITIONS VALUE 260 BF547 UNIT K/W MAX. 100 250 1.6 - - UNIT nA GHz pF dB S 21 = 10 log ------------------------------------------------------------- dB . 2 2 1 - S 11 1 - S 22 2 handbook, halfpage 400 MBB401 MBB397 handbook, halfpage 140 Ptot (mW) 300 h FE 100 200 60 100 0 0 50 100 150 Ts (oC) 200 20 10 1 1 10 2 I C (mA) 10 VCE = 10 V. Fig.3 Fig.2 Power derating curve. DC current gain as a function of collector current. September 1995 3 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 MBB474 handbook, halfpage 1.6 handbook, halfpage 1.4 MBB399 Cre (pF) fT (GHz) 1.0 0.8 0.6 0 0.1 1 10 VCB (V) 100 0.2 10-1 1 10 IC (mA) 102 IE = ie = 0; f = 1 MHz. VCE = 10 V; f = 500 MHz. Fig.4 Feedback capacitance as a function of collector-base voltage Fig.5 Transition frequency as a function of collector current. handbook, halfpage 40 MBB407 MBB408 handbook, halfpage GUM (dB) 30 50 GUM (dB) 40 30 20 20 10 10 0 0 0 10 20 IC (mA) 30 -10 10 102 103 f (MHz) 104 VCE = 10 V; f = 100 MHz. VCE = 10 V; IC = 15 mA. Fig.6 Maximum unilateral power gain as a function of collector current. Fig.7 Maximum unilateral power gain as a function of frequency. September 1995 4 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 handbook, halfpage 10 MBB398 handbook, halfpage 8 MBB409 VCE sat (V) F (dB) 6 1 4 10-1 2 10-2 10-1 1 10 IC (mA) 102 0 10-1 1 10 IC (mA) 102 IC/IB = 10. VCE = 10 V; ZS = ZL = 50 ; f = 100 MHz. Fig.8 Collector-emitter saturation voltage as a function of collector current. Fig.9 Common emitter noise figure as a function of collector current. handbook, halfpage 0 MBB410 handbook, halfpage 80 MBB413 b11 f = 1000 MHz 800 (mS) 600 400 -20 b21 (mS) -5 mA 200 IE = -2 mA 60 -10 mA -40 -5 mA -60 -10 mA -80 40 IE = -2 mA 200 300 500 600 800 f = 1000 MHz 20 10 20 30 40 50 60 g11 (mS) 0 -50 -40 -30 -20 -10 0 10 g21 (mS) VCB = 10 V. VCB = 10 V. Fig.10 Common base input admittance (Y11). Fig.11 Common base forward admittance (Y21). September 1995 5 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 handbook, halfpage 0 b12 (mS) MBB411 handbook, halfpage 8 MBB412 -0.5 b22 (mS) IE = -10 mA -5 mA -2 mA 200 300 6 f = 1000 MHz 800 500 4 600 500 800 300 200 f = 1000 MHz IE = -2 mA -5 mA -10 mA -1.0 -1.5 600 -2.0 2 -2.5 -0.7 -0.5 -0.3 g12 (mS) -0.1 0 0 0.4 0.8 1.2 1.6 g22 (mS) VCB = 10 V. VCB = 10 V. Fig.12 Common base reverse admittance (Y12). Fig.13 Common base output admittance (Y22). September 1995 6 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 50 handbook, full pagewidth 25 100 10 3 GHz +j 0 -j 40 MHz 10 10 25 50 100 250 250 250 25 50 VCE = 10 V; IC = 15 mA; ZO = 50 . 100 MBB403 Fig.14 Common emitter input reflection coefficient (S11). handbook, full pagewidth 90o 120o 60o 40 MHz 150o 30o + 180o 20 16 8 4 2 3 GHz 0o - 150o 30o 120o 90o VCE = 10 V; IC = 15 mA. 60o MBB405 Fig.15 Common emitter forward transmission coefficient (S21). September 1995 7 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 handbook, full pagewidth 90o 120o 60o 3 GHz 150o 30o + 180o 0.1 40 MHz 0.2 0.3 0.4 0.5 0o - 150o 30o 120o 90o VCE = 10 V; IC = 15 mA. 60o MBB406 Fig.16 Common emitter reverse transmission coefficient (S12). 50 handbook, full pagewidth 25 100 10 250 +j 0 -j 10 25 50 100 250 40 MHz 250 10 3 GHz 25 50 VCE = 10 V; IC = 15 mA; ZO = 50 . 100 MBB404 Fig.17 Common emitter output reflection coefficient (S22). September 1995 8 Philips Semiconductors Product specification NPN 1 GHz wideband transistor Table 1 Common base Y-parameters; VCB = 10 V; IE = -2 mA Y11 f (MHz) 40 100 200 300 400 500 600 700 800 900 1000 Table 2 REAL (mS) 69.0 60.4 45.0 34.3 27.7 24.0 21.5 20.0 18.6 18.3 17.8 IMAG. (mS) -10.2 -20.6 -27.4 -26.4 -23.3 -20.4 -18.0 -15.6 -14.0 -12.8 -11.7 REAL (mS) -68.0 -58.0 -39.1 -25.4 -17.2 -11.7 -7.8 -5.3 -3.0 -1.3 -0.1 Y21 IMAG. (mS) 12.3 25.6 34.5 34.0 31.1 27.6 25.0 22.6 20.2 18.7 17.1 REAL (mS) -0.02 -0.06 -0.10 -0.20 -0.20 -0.20 -0.20 -0.20 -0.20 -0.20 -0.20 Y12 IMAG. (mS) -0.1 -0.3 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -2.2 REAL (mS) -0.01 -0.08 0.19 0.29 0.37 0.45 0.53 0.60 0.69 0.82 0.95 BF547 Y22 IMAG. (mS) 0.3 0.7 1.4 1.9 2.5 3.0 3.6 4.2 4.7 5.3 5.9 Common base Y-parameters; VCB = 10 V; IE = -5 mA Y11 Y21 IMAG. (mS) -35.7 -62.0 -57.8 -46.9 -38.6 -32.8 -28.4 -25.2 -22.6 -20.7 -19.1 REAL (mS) -130.5 -91.1 -46.0 -26.4 -16.6 -11.0 -6.3 -3.3 -0.6 1.4 3.0 IMAG. (mS) 38.8 67.9 64.7 53.8 45.8 39.8 35.0 31.4 27.6 25.2 23.0 REAL (mS) -0.06 -0.20 -0.30 -0.40 -0.40 -0.40 -0.40 -0.40 -0.40 -0.40 -0.40 Y12 IMAG. (mS) -0.2 -0.5 -0.7 -0.8 -1.0 -1.3 -1.4 -1.6 -1.9 -2.1 -2.3 REAL (mS) -0.06 0.21 0.38 0.47 0.58 0.63 0.71 0.80 0.88 1.01 1.15 Y22 IMAG. (mS) 0.4 0.8 1.4 2.0 2.5 3.1 3.6 4.2 4.7 5.3 6.0 f (MHz) 40 100 200 300 400 500 600 700 800 900 1000 REAL (mS) 132.6 96.3 54.7 37.5 29.2 25.3 22.0 20.3 18.7 17.8 17.3 September 1995 9 Philips Semiconductors Product specification NPN 1 GHz wideband transistor Table 3 Common base Y-parameters; VCB = 10 V; IE = -10 mA Y11 f (MHz) 40 100 200 300 400 500 600 700 800 900 1000 Table 4 REAL (mS) 189.0 108.5 55.2 37.1 28.8 24.7 21.2 19.3 17.2 16.4 15.8 IMAG. (mS) -79.6 -99.0 -76.2 -59.0 -47.6 -40.2 -35.0 -31.0 -27.5 -25.2 -23.0 REAL (mS) -185.5 -101.4 -44.6 -24.3 -14.6 -8.6 -3.4 -0.2 2.6 4.6 6.0 Y21 IMAG. (mS) 83.0 105.4 82.8 65.7 54.4 46.7 40.8 36.2 31.1 28.3 25.5 REAL (mS) -0.10 -0.30 -0.50 -0.50 -0.60 -0.60 -0.60 -0.60 -0.60 -0.60 -0.60 Y12 IMAG. (mS) -0.3 -0.5 -0.7 -0.9 -1.0 -1.3 -1.5 -1.7 -1.9 -2.1 -2.3 REAL (mS) -0.09 0.30 0.44 0.60 0.69 0.75 0.84 0.93 1.00 1.15 1.31 BF547 Y22 IMAG. (mS) 0.4 0.9 1.4 2.0 2.5 3.1 3.6 4.2 4.7 5.3 6.0 Common base Y-parameters; VCB = 10 V; IE = -15 mA Y11 Y21 IMAG. (mS) -113.8 -114.0 -81.1 -62.1 -50.0 -42.3 -36.4 -32.0 -28.2 -25.7 -23.5 REAL (mS) -202.6 -96.4 -41.7 -22.0 -12.5 -6.1 -1.2 2.0 4.5 6.5 7.9 IMAG. (mS) 118.1 120.1 87.7 68.6 56.9 48.2 41.6 36.7 31.3 28.1 24.9 REAL (mS) -0.20 -0.40 -0.50 -0.60 -0.60 -0.60 -0.60 -0.60 -0.60 -0.60 -0.60 Y12 IMAG. (mS) -0.3 -0.5 -0.7 -0.8 -1.1 -1.3 -1.5 -1.7 -1.9 -2.1 -2.3 REAL (mS) 0.2 0.4 0.6 0.7 0.8 0.8 0.9 1.0 1.1 1.3 1.4 Y22 IMAG. (mS) 0.5 0.9 1.4 2.0 2.5 3.1 3.6 4.2 4.7 5.3 5.9 f (MHz) 40 100 200 300 400 500 600 700 800 900 1000 REAL (mS) 206.5 104.3 53.1 35.9 28.1 23.4 20.1 18.2 16.2 15.5 14.7 September 1995 10 Philips Semiconductors Product specification NPN 1 GHz wideband transistor PACKAGE OUTLINE BF547 handbook, full pagewidth 3.0 2.8 0.150 0.090 1.9 0.95 2 0.1 max 10 o max 3 1.1 max 30 o max 0.48 0.38 TOP VIEW 0.1 M A B 1 B A 0.2 M A 0.55 0.45 10 o max 1.4 1.2 2.5 max MBC846 Dimensions in mm. Fig.18 SOT23. DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. September 1995 11 |
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